xx=41

and Q2. The impurity doping concentrations in a silicon pn junction at T=300K are N, =(xx+2).104cm No = 4.10% cm-?. The pn junction has the following parameters: D = 25cm/s, D, = 10cm? /s, T, = T, = lus and A = 5.10 cm a) At zero-applied bias (i.e. thermal equilibrium), determine the built in potential V, space-charge region lengths x,x, and the maximum electric field value mer, b) Determine the space-charge region lengths xx, the maximum electric field value Emer and the junction capacitance C, for the reverse bias V = 5V, c) Determine the space-charge region lengths x-x, the maximum electric field value me and the current lo of the junction for the forward bias of V. = 0.55V