xx=41

Q1. Consider an extrinsic Silicon doped with Indium atoms at a concentration of N = 4x10'6 cm. The ionization energy for Indium is given as 0.16eV. Calculate: a) The carrier concentrations no, P, and the Fermi level Er - E, at the temperature of T = xx+60 "K. 40+ xx JN, No em for xx<50 100 b) The temperature at which po 60+xx N, cm', for xx 2 50 100 (Ex: xx = 00 → po = 0.4N, = 1.6x10' cm; xx = 99 → Po = 1.59N, = 6.36x10 cm) c) Using a computer program, plot p. (T) versus temperature over the range OST 5800 K in linear and logarithmic scale.